The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Oct. 18, 2006
Taek Ahn, Suwon-si, KR;
Min-chul Suh, Suwon-si, KR;
Jin-seong Park, Suwon-si, KR;
Seok-jong Lee, Suwon-si, KR;
Jung-han Shin, Suwon-si, KR;
Taek Ahn, Suwon-si, KR;
Min-Chul Suh, Suwon-si, KR;
Jin-Seong Park, Suwon-si, KR;
Seok-Jong Lee, Suwon-si, KR;
Jung-Han Shin, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Suwon-si, KR;
Abstract
A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile