The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7485891 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 03, 2009

Filed:

Nov. 20, 2003
Applicants:

Hendrik F. Hamann, Yorktown Heights, NY (US);

Chung Hon Lam, Willistion, VT (US);

Michelle Leigh Steen, Danbury, CT (US);

Hon-sum Philip Wong, Chappaqua, NY (US);

Inventors:

Hendrik F. Hamann, Yorktown Heights, NY (US);

Chung Hon Lam, Willistion, VT (US);

Michelle Leigh Steen, Danbury, CT (US);

Hon-Sum Philip Wong, Chappaqua, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multi-bit phase change memory cell including a stack of a plurality of conductive layers and a plurality of phase change material layers, each of the phase change material layers disposed between a corresponding pair of conductive layers and having electrical resistances that are different from one another.


Find Patent Forward Citations

Hamann, Hendrik. (2009). Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory (U.S. Patent No. 7485891). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7485891

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…