The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Oct. 25, 2005
Kwan-ju Koh, Bucheon, KR;
Kwan-Ju Koh, Bucheon, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
Methods of forming a metal line in a semiconductor device. A method includes: depositing a first etch stop layer, an interlayer insulating layer, a second etch stop layer, and a line insulating layer on a semiconductor substrate; forming a contact hole pattern on the line insulating layer; forming a contact hole by etching an exposed portion of the interlayer insulating layer using the contact hole pattern as a mask; forming a trench pattern on the line insulating layer; forming a trench by etching an exposed portion of the line insulating layer using the trench pattern as a mask; removing exposed portions of the first etch stop layer and the second etch stop layer after forming the contact hole and the trench; forming a first metal thin film within the contact hole; and forming a second metal thin film on the first metal thin film.