The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Jan. 22, 2007
Gyoung Ho Buh, Suwon-si, KR;
Ji-sang Yahng, Seoul-si, KR;
Yu Gyun Shin, SungNam-si, KR;
Guk-hyon Yon, Suwon-si, KR;
Sangjin Hyun, Kwachon-si, KR;
Gyoung Ho Buh, Suwon-si, KR;
Ji-Sang Yahng, Seoul-si, KR;
Yu Gyun Shin, SungNam-si, KR;
Guk-Hyon Yon, Suwon-si, KR;
Sangjin Hyun, Kwachon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.