The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Apr. 11, 2006
Jae Hoon Lee, Kyungki-do, KR;
Yong Chun Kim, Kyungki-do, KR;
Hyung KY Back, Kyungki-do, KR;
Moon Heon Kong, Kyungki-do, KR;
Dong Woo Kim, Choongcheongbook-do, KR;
Jae Hoon Lee, Kyungki-do, KR;
Yong Chun Kim, Kyungki-do, KR;
Hyung Ky Back, Kyungki-do, KR;
Moon Heon Kong, Kyungki-do, KR;
Dong Woo Kim, Choongcheongbook-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlGaInN layer, an active layer and a p-doped AlGaInN layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlGaInN layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlGaInN layer.