The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Aug. 14, 2006
Applicant:
Hiroaki Tamura, Fujimimachi, JP;
Inventor:
Hiroaki Tamura, Fujimimachi, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/469 (2006.01); H01L 21/20 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device, the method including the steps of: (a) forming a titanium layer above a substrate; (b) forming a barrier layer above the titanium layer; (c) changing the titanium layer to a titanium nitride layer by conducting a heat treatment in a nitrogen containing atmosphere; (d) forming a first electrode above the barrier layer; (e) forming a ferroelectric layer above the first electrode; and (f) forming a second electrode above the ferroelectric layer.