The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
May. 25, 2006
Mikiko Takada, Yokohama, JP;
Kazunori Ito, Yokohama, JP;
Hiroshi Deguchi, Yokohama, JP;
Masaki Kato, Sagamihara, JP;
Hiroko Ohkura, Yokohama, JP;
Hiroyoshi Sekiguchi, Yokohama, JP;
Mikiko Takada, Yokohama, JP;
Kazunori Ito, Yokohama, JP;
Hiroshi Deguchi, Yokohama, JP;
Masaki Kato, Sagamihara, JP;
Hiroko Ohkura, Yokohama, JP;
Hiroyoshi Sekiguchi, Yokohama, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
An optical recording medium including: a substrate having translucency; a first protective layer thereon; a recording layer composed of a phase-change material; a second protective layer; and a reflective layer, wherein laser beam irradiation causes phase-change of the recording layer between a crystalline phase and an amorphous phase thereby at least one of to rewrite and to record information, wherein the phase-change material comprises Ga, Sb and Sn, Ga content, Sb content, and Sn content satisfy the following formula, and the total content of Ga, Sb and Sn is at least 80 atomic % of the entire phase-change material:GaSbSn(where, α+β+γ=100 atomic %),where 20≦−2.75α+0.708β+1.18γ−7.56≦43,and α/(α+β)≦0.12.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile