The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Nov. 14, 2006
Applicants:
Jung Eun Lee, Seongnam-si, KR;
Hoon Tae Kim, Yongin-si, KR;
Jeong Wook Koh, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS amplifier of a filter for an ultra wideband application and a method of the same are provided. In the CMOS amplifier, an active load circuit adds a Zero location and increases a gain by MOSFETs, feeding back operation, and has a property of a high gain and a wide bandwidth. When the CMOS amplifier is applied to a biquad LPF, a high voltage linearity over about 200 mV peak-to-peak and an suitable ultra wideband property over about 320 MHz of an cutoff frequency may be achieved.