The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2009

Filed:

Feb. 12, 2004
Applicants:

Rob Van Dalen, Eindhoven, NL;

Gerrit Elbert Johannes Koops, Leuven, BE;

Inventors:

Rob Van Dalen, Eindhoven, NL;

Gerrit Elbert Johannes Koops, Leuven, BE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a so-termed punchthrough diode () with a stack of, for example, n++, n−, p+, n++ regions (). In the known diode, these semiconductor regions () are positioned in said order on a substrate (). The diode is provided with connection conductors (). Such a diode does not have a steep I-V characteristic and is therefore less suitable as a TVSD (=Transient Voltage Suppression Device). In particular at voltages below 5 volts, a punchthrough diode could form an attractive alternative as TVSD. In a punchthrough diode () according to the invention, a part of the first semiconductor region () bordering on the second semiconductor region () comprises a number of sub-regions (A) which are separated from each other by a further semiconductor region () of the second, for example p+, conductivity type which is electrically connected to the first connection conductor (). Such a diode has a very steep I-V characteristic, is very suitable as a TVSD and functions very well at an operating voltage below 5 volts. Preferably, the further region () comprises a part (A) which is wider than the other parts thereof. The regions () may be present in two different orders within a stack positioned on the substrate (), each of said orders having certain advantages.


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