The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Jan. 16, 2007
Gerhard Knoblinger, Villach, AT;
Klaus Von Arnim, Herzhorn, AT;
Gerhard Knoblinger, Villach, AT;
Klaus Von Arnim, Herzhorn, AT;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor circuit arrangement includes at least one first and a second field effect transistor, where the field effect respectively have at least two active regions with, respectively, a source region, a drain region and an intermediate channel region, the surface of the channel regions having a gate formed on it, insulated by a gate dielectric, for actuating the channeel regions. At least one active region of the second field effect transistor is arranged between the at least two active regions of the first field effect transistor, which results in a reduced mismatch between the two transistors, caused by temperature and local distances.