The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
May. 11, 2005
Bruno Nadd, Lourmarin, FR;
Bruno Nadd, Lourmarin, FR;
International Rectifier Corporation, El Segundo, CA (US);
Abstract
An IGBT device, comprising a substrate having a conductivity type; a drain electrode arranged on a bottom surface of the substrate; an epitaxial layer arranged on the substrate and having a conductivity type opposite that of the substrate; at least one body diffusion arranged within the epitaxial layer and having a conductivity type the same as that of the substrate; at least one source diffusion arranged within the body diffusion and having a conductivity type the same as that of the epitaxial layer; a gate electrode to control the IGBT device; a source electrode electrically coupled to the body diffusion and the source diffusion; an additional diffusion arranged within the epitaxial layer and having a conductivity type the same as that of the substrate, the additional diffusion forming a collector region of a vertical bipolar arrangement in the IGBT; and a sense electrode electrically coupled to the additional diffusion; wherein the presence of minority carriers in the epitaxial layer may be detected in accordance with a voltage of the sense electrode.