The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Mar. 21, 2005
Takao Nishikawa, Nagano, JP;
Yoshihiro Iwasa, Miyagi, JP;
Shin-ichiro Kobayashi, Miyagi, JP;
Taishi Takenobu, Miyagi, JP;
Takao Nishikawa, Nagano, JP;
Yoshihiro Iwasa, Miyagi, JP;
Shin-ichiro Kobayashi, Miyagi, JP;
Taishi Takenobu, Miyagi, JP;
Seiko Epson Corporation, , JP;
Abstract
An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain electrode formed directly on the gate insulating film, an organic semiconductor layer formed directly on the source electrode and the drain electrode, and a voltage control layer disposed directly between the gate insulating film and the organic semiconductor layer and directly contacting the source electrode and the drain electrode, wherein the voltage control layer gives an ambipolar characteristic to the organic semiconductor layer.