The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Dec. 20, 2006
Han Choon Lee, Seoul, KR;
Kyung Min Park, Incheon, KR;
Cheon Man Shim, Seoul, KR;
Dongbu Electronics, Co., Ltd., Seoul, KR;
Abstract
A semiconductor device and method of manufacturing same, capable of preventing the material of a barrier metal layer from penetrating into an intermetallic insulating layer are provided. In an embodiment, the device can include: a first metal interconnection formed in a lower insulating layer on a semiconductor substrate; an intermetallic insulating layer formed on the lower insulating layer including the first metal interconnection, the intermetallic insulating layer having a via hole and a trench for a second metal interconnection connecting to the first metal interconnection; a carbon implantation layer formed on inner walls of the via hole and the trench of the intermetallic insulating layer; a barrier metal layer deposited on the first metal interconnection exposed through the via hole and on the carbon implantation layer; a via formed in the via hole; and the second metal interconnection formed in the trench.