The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Nov. 27, 2006
Cheol MO Jeong, Icheon-Si, KR;
Seong Hwan Myung, Suwon-si, KR;
Eun Soo Kim, Incheon-Si, KR;
Suk Joong Kim, Kyeongki-do, KR;
Cheol Mo Jeong, Icheon-Si, KR;
Seong Hwan Myung, Suwon-si, KR;
Eun Soo Kim, Incheon-Si, KR;
Suk Joong Kim, Kyeongki-do, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A semiconductor device includes a first barrier metal layer and a second barrier metal layer, a third barrier metal layer, and a metal line. The first barrier metal layer and the second barrier metal layer are formed and on a top surface of an insulating layer over a semiconductor substrate on the bottom surface of trenches formed in the insulating layer. The third barrier metal layer is formed on sidewalls of trenches. The metal line gap-fills the trenches. In a method of forming a metal line of a semiconductor device, trenches are formed within an insulating layer over a semiconductor substrate. A first barrier metal layer and a second barrier metal layer are formed on a bottom surface of the trenches and on a top surface of the insulating layer. A third barrier metal layer is formed on sidewalls of trenches. A metal line gap-fills the trenches.