The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Dec. 30, 2005
Applicant:
Woong Je Sung, Bucheon, KR;
Inventor:
Woong Je Sung, Bucheon, KR;
Assignee:
Dongbu Electronics, Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes steps of injecting a hole current into an N drift region while a constant voltage is applied to a Panode of a lateral insulated gate bipolar transistor, such that a majority of the hole current passes through a Pcathode of the lateral insulated gate bipolar transistor via a Pburied layer. Therefore, a hole-current path located under an Ncathode area of a LIGBT structure is eliminated, thus securing sufficient latch-up current density.