The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2009

Filed:

Dec. 08, 2004
Applicants:

Yoshihiko Minachi, Tokyo, JP;

Junichi Nagaoka, Tokyo, JP;

Shunsuke Kurasawa, Tokyo, JP;

Noboru Ito, Tokyo, JP;

Taku Murase, Tokyo, JP;

Takeshi Masuda, Tokyo, JP;

Kenya Takagawa, Tokyo, JP;

Hidenobu Umeda, Tokyo, JP;

Inventors:

Yoshihiko Minachi, Tokyo, JP;

Junichi Nagaoka, Tokyo, JP;

Shunsuke Kurasawa, Tokyo, JP;

Noboru Ito, Tokyo, JP;

Taku Murase, Tokyo, JP;

Takeshi Masuda, Tokyo, JP;

Kenya Takagawa, Tokyo, JP;

Hidenobu Umeda, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/26 (2006.01); H01F 1/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A ferrite magnetic material comprising a main phase of W-type is provided which has magnetic properties improved through the optimization of additives. The ferrite magnetic material comprises a main constituent having a compound represented by composition formula AFeFeO(wherein A comprises at least one element selected from Sr, Ba and Pb; 1.5≦a≦2.1; and 12.9≦b≦16.3), a first additive containing a Ca constituent (0.3 to 3.0 wt % in terms of CaCO) and/or a Si constituent (0.2 to 1.4 wt % in terms of SiO), and a second additive containing at least one of an Al constituent (0.01 to 1.5 wt % in terms of AlO), a W constituent (0.01 to 0.6 wt % in terms of WO), a Ce constituent (0.001 to 0.6 wt % in terms of CeO), a Mo constituent (0.001 to 0.16 wt % in terms of MoO), and a Ga constituent (0.001 to 15 wt % in terms of GaO).


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