The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7479700 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 20, 2009

Filed:

Jan. 05, 2006
Applicants:

Toshiyuki Takewaki, Kawasaki, JP;

Kazuyoshi Ueno, Kawasaki, JP;

Inventors:

Toshiyuki Takewaki, Kawasaki, JP;

Kazuyoshi Ueno, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor device, an insulating interlayer is provided above a semiconductor substrate, and a plurality of first wiring layers and a plurality of second wiring layers are formed in the insulating interlayer. The first wiring layers are substantially composed of copper, and are arranged in parallel at a large pitch. The second wiring layers are substantially composed of copper, and are arranged in parallel at a small pitch. A first metal capping layer is formed on each of the first wiring layers, and a second metal capping layer is formed on each of the second wiring layers. The second metal capping layer has a smaller thickness than that of the first metal capping layer.


Find Patent Forward Citations

Takewaki, Toshiyuki. (2009). Semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thickness formed thereon, and method for manufacturing the same (U.S. Patent No. 7479700). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7479700

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