The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Sep. 08, 2005
Makoto Kondou, Fukuoka, JP;
Kiyoshi Arai, Tokyo, JP;
Jose Saiz, Aureilhan, FR;
Pierre Solomalala, Aureilhan, FR;
Emmanuel Dutarde, Laloubere, FR;
Benoit Boursat, Bizanos, FR;
Philippe Lasserre, Ousse, FR;
Makoto Kondou, Fukuoka, JP;
Kiyoshi Arai, Tokyo, JP;
Jose Saiz, Aureilhan, FR;
Pierre Solomalala, Aureilhan, FR;
Emmanuel Dutarde, Laloubere, FR;
Benoit Boursat, Bizanos, FR;
Philippe Lasserre, Ousse, FR;
Mitsubishi Denki Kabushiki Kaisha, Chiyoda-Ku, Tokyo, JP;
Alstom Transport SA, Levallois-Perret, FR;
Abstract
One of the aspects of the present invention is to provide a power semiconductor device, including a first substrate having a first circuit pattern formed thereon, and a second substrate having a second circuit pattern formed thereon. The first substrate has a first center line extending along a predetermined transverse direction. At least one power semiconductor chip is mounted on the first circuit pattern of the first substrate, and has at least one chip electrode opposing to the second circuit pattern of the second substrate. Also, a plurality of first conductive connectors on the first circuit pattern is provided for electrical connection with the second circuit pattern of the second substrate. The first conductive connectors are arranged symmetrically in relative to the first center line of the first substrate.