The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Sep. 12, 2006
Yasuhito Urashima, Ichihara, JP;
Yasuhito Urashima, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
It is an object of the present invention to inhibit exposure of Ag in Ag-employing reflective electrodes caused by microdefects generated during the manufacturing process, and to prevent reduction in light emission output and deterioration in current-voltage characteristics resulting from shorting of the light emitting device. The semiconductor light emitting device comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in that order on a substrate, with a negative electrode and positive electrode each formed in contact with the n-type semiconductor layer and p-type semiconductor layer, respectively. The positive electrode comprises at least a contact metal layer composed of at least one type of metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru and Re or their alloy in contact with the p-type semiconductor layer, a reflective layer composed of a metal or alloy containing Ag as the main component on the contact layer, and one or more protective metal layers containing no Ag, covering the top and side surfaces of the reflective layer.