The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Jul. 14, 2005
Yuichi Harano, Hitachi, JP;
Jun Gotoh, Mobara, JP;
Toshiki Kaneko, Chiba, JP;
Masanao Yamamoto, Mobara, JP;
Yuichi Harano, Hitachi, JP;
Jun Gotoh, Mobara, JP;
Toshiki Kaneko, Chiba, JP;
Masanao Yamamoto, Mobara, JP;
Hitachi Displays, Ltd., Chiba, JP;
Abstract
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.