The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Dec. 02, 2003
Applicant:
Akitaka Kimura, Tokyo, JP;
Inventor:
Akitaka Kimura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Oxygen is doped in a quantum well active layer. First, an n-type InGaN barrier layerof 10 nm is formed by supplying TMG at 10 sccm, TMI at 30 sccm, Oat 20 sccm, and NHat 10 slm, on the n-type GaN optical guide layer. Next, a molar flow rate of TMI is increased to 50 sccm, and an undoped InGaN well layerof 3 nm is formed. This process is repeated three cycles, and finally, the process is completed with the n-type InGaN barrier layer. A p-type AlGaN cap layerwhose thickness is 20 nm is formed by supplying TMG at 15 sccm, TMA at 5 sccm, and (EtCp)Mg at 5 sccm and NHat 10 slm, on a multi-quantum well structure active layerformed in this way.