The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Dec. 08, 2004
Peter J. Hopper, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Andy Strachan, Santa Clara, CA (US);
Peter J. Hopper, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Andy Strachan, Santa Clara, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.