The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Apr. 22, 2005
William R. Entley, San Jose, CA (US);
John G. Langan, Pleasanton, CA (US);
Amith Murali, Fremont, CA (US);
Kathleen Bennett, Gilroy, CA (US);
William R. Entley, San Jose, CA (US);
John G. Langan, Pleasanton, CA (US);
Amith Murali, Fremont, CA (US);
Kathleen Bennett, Gilroy, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Methods of determining the endpoint of cleaning residues from the internal surfaces of a chemical vapor deposition chamber are described. The methods are especially useful for determining when organic-based residues deposited from an ultra low-k film precursor deposition are removed from the chamber. The methods involve cleaning the chamber with a plasma comprising fluorine and oxygen while monitoring the intensity of the optical emission lines of one or more atomic or molecular species that correlate to the removal of the organic-based residues. Techniques and apparatuses for monitoring different appropriate emission lines are described. Methods of the invention can be used to prevent particle contamination during CVD operations following ultra low-k film precursor depositions and improve wafer throughput in manufacturing environments.