The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Nov. 26, 2003
Ralph B. Danzl, Tempe, AZ (US);
Mark R. Boone, Gilbert, AZ (US);
Paul F. Gerrish, Phoenix, AZ (US);
Michael F. Mattes, Chandler, AZ (US);
Tyler Mueller, Phoenix, AZ (US);
Jeff Van Wagoner, Gilbert, AZ (US);
Ralph B. Danzl, Tempe, AZ (US);
Mark R. Boone, Gilbert, AZ (US);
Paul F. Gerrish, Phoenix, AZ (US);
Michael F. Mattes, Chandler, AZ (US);
Tyler Mueller, Phoenix, AZ (US);
Jeff Van Wagoner, Gilbert, AZ (US);
Medtronic, Inc., Minneapolis, MN (US);
Abstract
Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.