The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Jun. 16, 2004
Kenichi Shimura, Tokyo, JP;
Kuniko Kikuta, Tokyo, JP;
Kenichi Shimura, Tokyo, JP;
Kuniko Kikuta, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A technique for reducing influences of the bias magnetic field developed by yokes used for concentrating the magnetic field on magnetoresistance elements, on MRAM operations. An MRAM is composed of a plurality of magnetoresistance elements having magnetic anisotropy in a first direction; a wiring extended in a second direction different from the first direction, through which a write current flows for writing data into the magnetoresistance elements; and a yoke layer formed of ferromagnetic material, extended along the second direction, and covering at least a portion of a surface of the wiring. The plurality of magnetoresistance elements include a first magnetoresistance element, and a second magnetoresistance element of which the distance from an end of the yoke layer is further than that of the first magnetoresistance element. The first magnetoresistance element has a magnetic anisotropy stronger than that of the second magnetoresistance element.