The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Dec. 13, 2005
Andrew W. Dornbusch, Austin, TX (US);
Andrew W. Dornbusch, Austin, TX (US);
Silicon Laboratories, Inc., Austin, TX (US);
Abstract
An integrated circuit includes first and second power supply voltage terminals, a voltage controlled oscillator (VCO), and a deep N-well field effect transistor (FET). The VCO has a first node coupled to the first power supply terminal, a second node, and first and second oscillator output terminals, at least one of which is coupled to a common pin. The deep N-well field-effect transistor (FET) has a first terminal coupled to the second node of the voltage controlled oscillator, a second terminal coupled to the second power supply terminal, and a control electrode to receive a power on signal, a deep N-well is coupled to the first power supply terminal and a P-channel is coupled to the second power supply terminal to form a high impedance electrostatic discharge path between the common pin and the first and the second power supply terminals through the deep N-well.