The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Dec. 20, 2005
Youichi Nagai, Itami, JP;
Hiroyuki Kitabayashi, Itami, JP;
Hirohisa Saito, Itami, JP;
Ayako Ikeda, Pasadena, CA (US);
Youichi Nagai, Itami, JP;
Hiroyuki Kitabayashi, Itami, JP;
Hirohisa Saito, Itami, JP;
Ayako Ikeda, Pasadena, CA (US);
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlGaN layer, a p-type AlGaN layer positioned further than the n-type AlGaN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlGaN layer and the p-type AlGaN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlGaN layer is mounted face-down, and the light is emitted from the second main surfacethat is opposite to the first main surface of the nitride semiconductor substrate. The second main surfaceof nitride semiconductor substrate has trenches formed therein.