The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Aug. 11, 2006
Masahiro Murayama, Kyoto, JP;
Masahiro Murayama, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer etching process; a side-etching process that selectively etches the side of the mask layer with the high etching rate to define a groove portion with a portion of the p-type semiconductor layer exposed; a ZrOfilm forming process that forms a ZrOfilm so as to cover the exposed p-type semiconductor layer; an AlOfilm forming process that forms an AlOfilm so as to cover the ZrOfilm; a mask layer removing process; and an electrode layer forming process. The method for manufacturing the semiconductor light-emitting device increases the yield of lift-off with respect to the p-type semiconductor layer and can produce a semiconductor light-emitting device with an improved voltage resistance.