The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Nov. 13, 2007
Kenji Toyoda, Osaka, JP;
Kenji Toyoda, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An organic FET in which the interfaces (electrode interfaces) between a semiconductor layer and a source electrode and between a semiconductor layer and a drain electrode are improved by employing a technique to increase ON-state current (driving current) and to reduce contact resistance. The organic FET includes a substrate; a gate insulating film disposed on the substrate; a metal source electrode and a metal drain electrode disposed on the gate insulating film in such a manner that they face each other in a horizontal direction; and an organic semiconductor layer covering the gate insulating film, the source electrode and the drain electrode, wherein a first organic molecule layer and a second organic molecule layer are formed on the interfaces (electrode interfaces) between a semiconductor layer and a source electrode and between a semiconductor layer and a drain electrode.