The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2009

Filed:

Feb. 03, 2005
Applicant:

Yuuichi Inaba, Moriguchi, JP;

Inventor:

Yuuichi Inaba, Moriguchi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In order to implement a solid-state imaging device with high photo-sensitivity that includes a light collecting part which can reduce undesired variations during manufacture and which has high light collection efficiency, the solid-state imaging device includes: a photodiode () which converts incident light () into electric charges; a convex lens layer () which is formed above the photodiode () and through which the incident light is transmitted; and a concavo-convex lens layer () which is formed on and around the lens layer () and which collects the incident light and outputs the incident light to the lens layer (). A refractive index of the lens layer () is greater than a refractive index of the lens layer (). A thickness and a width of the lens layer () are set to achieve a predetermined focal length for light of a predetermined wavelength range. The lens layer is made of one of boron phosphorous silicon glass, tetra ethoxy silane, benzocyclobutene, and polyimide resin.


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