The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Nov. 04, 2004
Hiroyuki Kunishima, Kanagawa, JP;
Toshiyuki Takewaki, Kanagawa, JP;
Hiroyuki Kunishima, Kanagawa, JP;
Toshiyuki Takewaki, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, JP;
Abstract
An interconnect trench is formed on a dielectric layerand a first HSQ layerformed on a semiconductor substrate, and a tantalum family barrier metal layeris formed all over the substrate. Then a seed copper-containing metal layerand a plated copper layerare formed so as to fill a part of the interconnect trench. After that, a bias-sputtered copper-containing metal layeris formed on the plated copper layerso as to fill the remaining portion of the interconnect trench and then heat treatment is performed. As a result, a dissimilar metal contained in the bias-sputtered copper-containing metal layerdiffuses uniformly into the plated copper layer