The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
May. 01, 2006
Takeshi Yosho, Kawasaki, JP;
Takeshi Yosho, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device is provided, which comprises forming a first metal wiring layer above a semiconductor substrate, forming an inorganic insulating film above the first metal wiring layer, forming an organic insulating film on the inorganic insulating film, forming a recess in the organic insulating film, forming a reactive layer on the side surface of the recess, the reactive layer being capable of reaction under heat with the organic insulating film, applying a heat treatment to the reactive layer so as to permit the reactive layer to react with the organic insulating film while leaving an unreacted reactive layer, thereby allowing the reaction layer to grow on the side surface of the recess, the recess being diminished by the growth of the reaction layer, and removing the unreacted reactive layer to obtain a diminished recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile