The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2009

Filed:

May. 13, 2005
Applicants:

Ning Cheng, San Jose, CA (US);

Minh Van Ngo, Fremont, CA (US);

Jinsong Yin, Sunnyvale, CA (US);

Paul Raymond Besser, Sunnyvale, CA (US);

Connie Pin-chin Wang, Menlo Park, CA (US);

Russell Rosaire Austin Callahan, Dresden, DE;

Jeffrey Shields, Sunnyvale, CA (US);

Shankar Sinha, Redwood Shores, CA (US);

Jeff P. Erhardt, San Jose, CA (US);

Jeremy Chi-hung Chou, San Jose, CA (US);

Inventors:

Ning Cheng, San Jose, CA (US);

Minh Van Ngo, Fremont, CA (US);

Jinsong Yin, Sunnyvale, CA (US);

Paul Raymond Besser, Sunnyvale, CA (US);

Connie Pin-chin Wang, Menlo Park, CA (US);

Russell Rosaire Austin Callahan, Dresden, DE;

Jeffrey Shields, Sunnyvale, CA (US);

Shankar Sinha, Redwood Shores, CA (US);

Jeff P. Erhardt, San Jose, CA (US);

Jeremy Chi-Hung Chou, San Jose, CA (US);

Assignees:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a contact through a material includes forming a via through a dielectric material and cleaning the via using a dilute hydrofluoric (DHF) acid solution. The method further includes depositing a barrier layer within the via and depositing metal adjacent the barrier layer.


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