The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Jan. 09, 2007
Chang-hyun Cho, Kyungki-do, KR;
Tae-young Chung, Kyungki-do, KR;
Cheol-ju Yun, Kyungki-do, KR;
Jae-goo Lee, Kyungki-do, KR;
Ju-yong Lee, Seoul, KR;
Chang-Hyun Cho, Kyungki-do, KR;
Tae-Young Chung, Kyungki-do, KR;
Cheol-Ju Yun, Kyungki-do, KR;
Jae-Goo Lee, Kyungki-do, KR;
Ju-Yong Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device including storage nodes and a method of manufacturing the same: The method includes forming an insulating layer and an etch stop layer on a semiconductor substrate; forming storage node contact bodies to be electrically connected to the semiconductor substrate by penetrating the insulating layer and the etch stop layer; forming landing pads on the etch stop layer to be electrically connected to the storage node contact bodies, respectively; and forming storage nodes on the landing pads, respectively, the storage nodes of which outward sidewalls are completely exposed and which are arranged at an angle to each other.