The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jul. 24, 2006
Takashi Nakabayashi, Yokohama, JP;
Takashi Nakabayashi, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A distributed feedback semiconductor laser comprises a first cladding layer, a first optical guide layer, an active layer, a second optical guide layer, an InP semiconductor layer, an InGaAsP semiconductor layer, and a second cladding layer. The first optical guide layer is provided on the first cladding layer. The active layer is provided on the first optical guide layer. The second optical guide layer is provided on the active layer and made of AlGaInAs semiconductor. The InP semiconductor layer is provided on the second optical guide layer. The InGaAsP semiconductor layer is provided on the InP semiconductor layer. The second cladding layer is provided on the InGaAsP semiconductor layer and made of InP semiconductor. A diffraction grating for the distributed feedback semiconductor laser includes the InGaAsP semiconductor layer and the second cladding layer.