The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2009

Filed:

Sep. 21, 2007
Applicants:

Tso Lun Wu, Hsinchu, TW;

Shang Ling Liu, Hsinchu, TW;

Tze Chia Lin, Hsinchu, TW;

Ming Hsien Chou, Hsinchu, TW;

Inventors:

Tso Lun Wu, Hsinchu, TW;

Shang Ling Liu, Hsinchu, TW;

Tze Chia Lin, Hsinchu, TW;

Ming Hsien Chou, Hsinchu, TW;

Assignee:

HC Photonics Corp., Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/35 (2006.01); G02F 2/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for preparing a poled structure comprises the steps of forming a ferroelectric substrate having a top surface and a bottom surface, performing a doping process to form at least one inhibition block in the ferroelectric substrate, forming an electrode structure including a first electrode and a second electrode on the top surface and a third electrode on the bottom surface and applying a predetermined voltage to the electrode structure to form a plurality of inverted domains outside of the inhibition block in the ferroelectric substrate. The ferroelectric substrate has a first polarization direction and a first crystal structure, the inhibition block has a second crystal structure different from the first crystal structure, and the inverted domains have a second polarization direction substantially opposite to the first polarization direction.


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