The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Apr. 23, 2007
Bumha Lee, Pleasanton, CA (US);
David B. Barkin, San Francisco, CA (US);
Sing W. Chin, Alameda, CA (US);
Bumha Lee, Pleasanton, CA (US);
David B. Barkin, San Francisco, CA (US);
Sing W. Chin, Alameda, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A gain-boosted telescopic amplifier () includes clamping circuits for the bias devices to ensure fast over-voltage recovery. In one embodiment, the gain-boosted telescopic amplifier includes an input pair of NMOS transistors (M, M), a pair of NMOS gain-boosted cascode transistors (M, M) and a pair of PMOS gain-boosted cascode transistors (M, M). The amplifier includes first and second clamping circuits driving the gate terminals of the pair of PMOS cascode transistors, respectively. The clamping circuits limit the gate voltage of the PMOS cascode transistors to be within a threshold voltage from the desired bias voltage. Each clamping circuit can include only a pull-down device, a pull-up device or both. In another embodiment, the amplifier includes clamping circuits driving the gate terminals of the pair of NMOS cascode transistors for limiting the gate voltage of the NMOS cascode transistors to be within a threshold voltage of the desired bias voltage.