The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Oct. 02, 2006
Naoya Sashida, Kawasaki, JP;
Tatsuya Yokota, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Tatsuya Yokota, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises a capacitor formed over a semiconductor substrateand including a lower electrode, a dielectric filmformed over the lower electrode and an upper electrodeformed over the dielectric film, a first insulation filmformed over the semiconductor substrate and the capacitor, a first interconnectionformed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive filmfor preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation filmformed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation filmformed over the second insulation film, a second interconnectionformed over the third insulation film, and a second hydrogen diffusion preventive filmfor preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.