The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Mar. 05, 2004
Yoshiaki Kitano, Kanagawa, JP;
Hideshi Abe, Kanagawa, JP;
Jun Kuroiwa, Kanagawa, JP;
Kiyoshi Hirata, Kanagawa, JP;
Hiroaki Ohki, Kanagawa, JP;
Nobuhiro Karasawa, Kanagawa, JP;
Ritsuo Takizawa, Tokyo, JP;
Mitsuru Yamashita, Kanagawa, JP;
Mitsuru Sato, Kanagawa, JP;
Katsunori Kokubun, Kanagawa, JP;
Yoshiaki Kitano, Kanagawa, JP;
Hideshi Abe, Kanagawa, JP;
Jun Kuroiwa, Kanagawa, JP;
Kiyoshi Hirata, Kanagawa, JP;
Hiroaki Ohki, Kanagawa, JP;
Nobuhiro Karasawa, Kanagawa, JP;
Ritsuo Takizawa, Tokyo, JP;
Mitsuru Yamashita, Kanagawa, JP;
Mitsuru Sato, Kanagawa, JP;
Katsunori Kokubun, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrodefor reading a signal charge is provided on one side of a light-receiving sensor portionconstituting a pixel; a predetermined voltage signal V is applied to a light-shielding filmformed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor areais formed in the center on the surface of a first-conductivity-type semiconductor areaconstituting a photo-electric conversion area of the light-receiving sensor portion; and areas(A,B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor areais formed on the surface of the first-conductivity-type semiconductor areaat the end on the side of the electrodeand at the opposite end on the side of a pixel-separation area