The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Mar. 17, 2005
Jeffrey Scott Cross, Kawasaki, JP;
Mineharu Tsukada, Kawasaki, JP;
John David Baniecki, Kawasaki, JP;
Kenji Nomura, Kawasaki, JP;
Igor Stolichnov, Lausanne, CH;
Jeffrey Scott Cross, Kawasaki, JP;
Mineharu Tsukada, Kawasaki, JP;
John David Baniecki, Kawasaki, JP;
Kenji Nomura, Kawasaki, JP;
Igor Stolichnov, Lausanne, CH;
Fujitsu Limited, Kawasaki, JP;
Abstract
After a step of fabricating a MOS transistor () on a semiconductor substrate () and further steps up to bury a W plug (), an Ir film (), an IrOfilm (), a PZT film (), and an IrOfilm () are formed sequentially over the entire surface. The composition of the PZT film () is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (), the IrOfilm (), the PZT film () and the IrOfilm (), annealing is effected to remedy the damage to the PZT film () that is caused when the IrOfilm () is formed and to diffuse Ir in the IrOfilm () into the PZT film (). As a result, the Ir diffused into the PZT film () concentrates at an interface between the IrOfilm () and the PZT film () and at grain boundaries in the PZT film (), and the Ir concentrations at the interface and boundaries are higher than those in the grains.