The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Apr. 28, 2006
Koji Moriya, Atsugi, JP;
Akio Yamashita, Atsugi, JP;
Koji Moriya, Atsugi, JP;
Akio Yamashita, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
Provided is a method of controlling an alignment direction of CNTs in manufacturing a carbon nanotube semiconductor device using the CNTs for a channel region formed between a source electrode and a drain electrode. In manufacturing a carbon nanotube semiconductor device including a gate electrode, a gate insulating film, a source electrode, a drain electrode, a CNT layer formed between the source electrode and the drain electrode in contact therewith, the method conducts: dropping a CNT solution obtained by dispersing CNTs in a solvent onto a region between the source electrode and the drain electrode while an alternating current voltage is applied between the source electrode and the drain electrode; and removing the solvent to control an orientation of the CNTs in the CNT layer.