The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Aug. 01, 2006
Douglas B. Hershberger, Essex Junction, VT (US);
Steven H. Voldman, South Burlington, VT (US);
Michael J. Zierak, Essex Junction, VT (US);
Douglas B. Hershberger, Essex Junction, VT (US);
Steven H. Voldman, South Burlington, VT (US);
Michael J. Zierak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A circuit is provided which prevents dendrite formation on interconnects during semiconductor device processing due to a dendrite-forming current. The circuit includes a switch located in at least one of the dendrite-forming current paths. The switch is configured to be open or in the 'off' state during processing, and is configured to be closed or in the 'on' state after processing to allow proper functioning of the semiconductor device. The switch may include an nFET or pFET, depending on the environment in which it is used to control or prevent dendrite formation. The switch may be configured to change to the “closed” state when an input signal is provided during operation of the fabricated semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile