The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Nov. 12, 2007
Nathan Kraft, Pottsville, PA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Paul Thorup, West Jordan, UT (US);
Nathan Kraft, Pottsville, PA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Paul Thorup, West Jordan, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method of forming a field effect transistor includes the following steps. A trench is formed in a semiconductor region, and a shield dielectric layer lining lower sidewalls and a bottom surface of the trench is formed. A shield electrode is formed in a lower portion of the trench, and a dielectric layer is formed along upper trench sidewalls and over the shield electrode. A gate electrode is formed in the trench over the shield electrode, and an interconnect layer connecting the gate electrode and the shield electrode is formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile