The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jan. 31, 2007
Applicants:
Hwan-bae Yoo, Goyang-si, KR;
Hyun-chul Shin, Seoul, KR;
Inventors:
Hwan-Bae Yoo, Goyang-si, KR;
Hyun-Chul Shin, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of forming a nonvolatile memory device, and in devices formed according to the method, a hard mask used in patterning a stacked structure constituting a memory cell is simultaneously removed when a device isolation region is removed from a region of the substrate where a common source line is to be formed.
Yoo, Hwan-Bae. (2009). Nonvolatile memory device and method of forming the same (U.S. Patent No. 7473600). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7473600
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