The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jan. 11, 2006
Brent Alan Anderson, Jericho, VT (US);
Victor W. C. Chan, Newburgh, NY (US);
Edward Joseph Nowak, Essex Junction, VT (US);
Brent Alan Anderson, Jericho, VT (US);
Victor W. C. Chan, Newburgh, NY (US);
Edward Joseph Nowak, Essex Junction, VT (US);
International Business Machines Corporation, Amonk, NY (US);
Abstract
A method for forming a semiconductor transistor with an expanded top portion of a gate The gate is expanded through implanting atoms in the top portion of transistor's gate electrode region. The transistor formed includes a semiconductor region having two source/drain regions and a gate dielectric region formed on the channel region between the source/drain regions. The gate electrode region is formed on the gate dielectric region. The gate electrode region is formed such that it is electrically insulated from the channel region by the gate dielectric region. The top of the gate electrode region formed is wider than the bottom of the gate electrode region.