The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jun. 26, 2007
Ryo Kuroda, Kanagawa, JP;
Natsuhiko Mizutani, Tokyo, JP;
Ryo Kuroda, Kanagawa, JP;
Natsuhiko Mizutani, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a device includes the steps of (i) providing a near-field photomask including a light shield film for constituting a light shield portion and openings formed in the light shield film, wherein the openings include two or more parallel first slit openings lengthening in a first direction and a second slit opening lengthening in a second direction that is perpendicular to the first directions, wherein the second slit opening interlinks the first slit openings, (ii) forming a photoresist layer on a substrate, (iii) exposing the photoresist layer to near-field light through the near-field photomask using polarized exposure light having an electrical field component parallel to the first direction, to form a latent image on the photoresist only in discrete regions at which the second slit opening crosses the light shield portion, (iv) forming a pattern of the photoresist layer based on the latent image, and (v) etching a surface of the substrate based on the pattern.