The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Mar. 28, 2006
Applicants:
Shuichi Inami, Tokyo, JP;
Nobumitsu Takase, Tokyo, JP;
Yasuhiro Kogure, Tokyo, JP;
Ken Hamada, Tokyo, JP;
Tsuyoshi Nakamura, Tokyo, JP;
Inventors:
Shuichi Inami, Tokyo, JP;
Nobumitsu Takase, Tokyo, JP;
Yasuhiro Kogure, Tokyo, JP;
Ken Hamada, Tokyo, JP;
Tsuyoshi Nakamura, Tokyo, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.