The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Sep. 06, 2005
Keiji Koga, Tokyo, JP;
Keiji Koga, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
A magnetic memory capable of reducing diffusion of ferromagnetic material into semiconductor element area is provided. A magnetic memoryincludes plural memory areasdisposed in two-dimension of m rows and n columns (m, n are integers of 2 or more). The magnetic memoryincludes semiconductor layerincluding drain areaand source areafor write transistor, magnetic material layerincluding TMR elementand write wiring, and wiring layerincluding bit wiringsandand word wiringbeing sandwiched between semiconductor layerand magnetic material layer. Since wiring layeris sandwiched between magnetic material layerand semiconductor layer, the ferromagnetic material diffusing (migrates) from TMR elementhardly reaches to semiconductor layer. Thus, the diffusion of the ferromagnetic material into the drain areaand the source areacan be reduced.