The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Apr. 15, 2005
Jack L. Glenn, Kokomo, IN (US);
Troy D. Clear, Kokomo, IN (US);
Mark W. Gose, Kokomo, IN (US);
Doublas B. Osborn, Kokomo, IN (US);
Nicholas T. Campanile, Kokomo, IN (US);
Jack L. Glenn, Kokomo, IN (US);
Troy D. Clear, Kokomo, IN (US);
Mark W. Gose, Kokomo, IN (US);
Doublas B. Osborn, Kokomo, IN (US);
Nicholas T. Campanile, Kokomo, IN (US);
Delphi Technologies, Inc., Troy, MI (US);
Abstract
An integrated circuit (IC) with negative potential protection includes at least one double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The IC also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket and a first-type+ ring formed through the first-type epitaxial pocket between the second-type+ isolation ring and the DMOS cell.