The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Nov. 24, 2004
Hyeon Jin Shin, Gyeonggi-Do, KR;
Hyun Dam Jeong, Gyeonggi-Do, KR;
Hyeon Jin Shin, Gyeonggi-Do, KR;
Hyun Dam Jeong, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a pore-forming agent (porogen) to prepare a composition for forming a dielectric film, and the composition is coated on a substrate to form an interlayer dielectric film for a semiconductor device. The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile